Transmission of Slow Light through Photonic Crystal Waveguide Bends

The spectral dependence of a bending loss of cascaded 60-degree bends in photonic crystal (PhC) waveguides is explored in a slab-type silicon-on-insulator system. Ultra-low bending loss of (0.05+/-0.03)dB/bend is measured at wavelengths corresponding to the nearly dispersionless transmission regime. In contrast, the PhC bend is found to become completely opaque for wavelengths range corresponding to the slow light regime. A general strategy is presented and experimentally verified to optimize the bend design for improved slow light transmission.Comment: 4 pages, 3 figures; submitted to Optics Letter

Mapping the optical properties of slab-type two-dimensional photonic crystal waveguides

We report on systematic experimental mapping of the transmission properties of two-dimensional silicon-on-insulator photonic crystal waveguides for a broad range of hole radii, slab thicknesses and waveguide lengths for both TE and TM polarizations. Detailed analysis of numerous spectral features allows a direct comparison of experimental data with 3D plane wave and finite-difference time-domain calculations. We find, counter-intuitively, that the bandwidth for low-loss propagation completely vanishes for structural parameters where the photonic band gap is maximized. Our results demonstrate that, in order to maximize the bandwidth of low-loss waveguiding, the hole radius must be significantly reduced. While the photonic band gap considerably narrows, the bandwidth of low-loss propagation in PhC waveguides is increased up to 125nm with losses as low as 8$\pm$2dB/cm.Comment: 10 pages, 8 figure

Mid-infrared broadband modulation instability and 50 dB Raman assisted parametric gain in silicon photonic wires

Abstract: We demonstrate broadband modulation instability, > 40 dB parametric amplification with on-chip gain bandwidth > 580 nm, and narrowband Raman-assisted peak on-chip gain exceeding 50 dB, using mid-infrared dispersion-engineered silicon nanophotonic wires

Deterministic tuning of slow-light in photonic-crystal waveguides through the C and L bands by atomic layer deposition

We demonstrate digital tuning of the slow-light regime in silicon photonic-crystal waveguides by performing atomic layer deposition of hafnium oxide. The high group-index regime was deterministically controlled (red-shift of 140 +/- 10 pm per atomic layer) without affecting the group-velocity dispersion and third-order dispersion. Additionally, differential tuning of 110 +/- 30 pm per monolayer of the slow-light TE-like and TM-like modes was observed. This passive post-fabrication process has potential applications including the tuning of chip-scale optical interconnects, as well as Raman and parametric amplification.Comment: 14 pages, 5 figure